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january 2016 docid027730 rev 3 1 / 13 this is information on a product in full production. www.st.com STF140N6F7 n - channel 60 v, 0.0031 typ., 70 a stripfet? f7 power mosfet in a to - 220fp package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STF140N6F7 60 v 0.0035 70 a 33 w ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on - state resistance, while a lso reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packing STF140N6F7 140n6f7 to - 220fp tube t o-220f p
contents STF140N6F7 2 / 1 3 docid027730 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 220fp package information ................................ ...................... 10 5 revision history ................................ ................................ ............ 12
STF140N6F7 electrical ratings docid027730 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t case = 25 c 70 a drain current (continuous) at t case = 100 c 50 i dm (2) drain current (pulsed) 280 a p tot total dissipation at t case = 25 c 33 w e as (3) single pulse avalanche energy 250 mj dv/dt (4) drain - body diode dynamic dv/dt ruggedness 7.1 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 175 c t j maximum junction temperature 175 notes: (1) current is limited by package. (2) pulse width is limited by safe operating area. (3) starting t j = 25c, i d = 20 a, v dd = 30 v. (4) i sd = 70 a; di/dt = 600 a/ s; v dd = 48 v; t j < t jmax table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 4.5 c/w r thj - amb thermal resistance junction - ambient 62.5
electrical characteristics STF140N6F7 4 / 13 docid027730 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 1 a v gs = 0 v, v ds = 60 v, t j = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 35 a 0.0031 0.0035 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 3100 - pf c oss output capacitance - 1520 - c rss reverse transfer capacitance - 193 - q g total gate charge v dd = 30 v, i d = 70 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 55 - nc q gs gate - source charge - 19 - q gd gate - drain charge - 18 - table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 35 a r g = 4.7 , v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and figure 18: "switching time waveform" ) - 24 - ns t r rise time - 68 - t d(off) turn - off delay time - 39 - t f fall time - 20 -
STF140N6F7 electrical characteristics docid027730 rev 3 5 / 13 table 7: source - drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0 v, i sd = 70 a - 1.2 v t rr reverse recovery time i sd = 70 a, di/dt = 100 a/s, v dd = 48 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 42.4 ns q rr reverse recovery charge - 38.2 nc i rrm reverse recovery current - 1.8 a notes: (1) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STF140N6F7 6 / 13 docid027730 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STF140N6F7 electrical characteristics docid027730 rev 3 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : norma lized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STF140N6F7 8 / 13 docid027730 rev 3 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STF140N6F7 package information docid027730 rev 3 9 / 13 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STF140N6F7 10 / 13 docid027730 rev 3 4.1 to - 220fp package information figure 19 : t o - 220fp package outline
STF140N6F7 package information docid027730 rev 3 11 / 13 table 8: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
revision history STF140N6F7 12 / 13 docid027730 rev 3 5 revision history table 9: document revision history date revision changes 09 - apr - 2015 1 first release. 17 - apr - 2015 2 throughout document: - minor text edits - updated drain - source on - resistance values 14 - jan - 2016 3 updated table 2: "absolute maximum ratings" .
STF140N6F7 docid027730 rev 3 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, select ion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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